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• W3196444048 abstract "Polarization-engineered Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.2</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.8</sub> N channel heterostructure field-effect transistors (HFETs) with quaternary InAlGaN barrier layers have been investigated theoretically and numerically. The polarization-matched (PolM) normally-OFF InAlGaN/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.2</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.8</sub> N HFETs exhibited great breakdown characteristics, in which large breakdown voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{B}$ </tex-math></inline-formula> ) and highly efficient modulation of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{B}$ </tex-math></inline-formula> have been observed by varying the Al composition in the InAlGaN barrier. The electron drift velocity of approximately 1.1 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$times ,,10^{{7}}$ </tex-math></inline-formula> cm/s, on par with that of the GaN channel HFETs, was achieved and become saturated in the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.2</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.8</sub> N channel of the InAlGaN/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.2</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.8</sub> N PolMHFETs when the ON-state drain bias operated in the current saturation region. Moreover, the electron saturation velocity of the InAlGaN/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.2</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.8</sub> N PolMHFETs showed a little deviation from that of an Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.2</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.8</sub> N channel layer at high electric fields which was attributed to the carrier injection from the contacts neglected in the analytical model. As a result, superior RF power performance was obtained for the normally-OFF InAlGaN/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.2</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.8</sub> N PolMHFETs, according to the small- and large-signal simulation results. These findings highlight the advantages and potential of normally-OFF InAlGaN/AlGaN PolMHFETs for applications in high-frequency power electronics enabled by the alternative large <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{B}$ </tex-math></inline-formula> without increasing the device dimension or Al composition in the AlGaN channel and high electron saturation velocity." @default.
• W3196444048 created "2021-09-13" @default.
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• W3196444048 date "2021-11-01" @default.
• W3196444048 modified "2023-09-26" @default.
• W3196444048 title "Polarization-Engineered Quaternary Barrier InAlGaN/AlGaN Heterostructure Field-Effect Transistors Toward Robust High-Frequency Power Performance in AlGaN Channel Electronics" @default.
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• W3196444048 doi "https://doi.org/10.1109/ted.2021.3108759" @default.
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