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- W3197238186 abstract "Abstract An inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN. The flow field of precursors in the chamber of ICP-MOCVD was analyzed and the structure of showerhead was optimized by changing the showerhead diameter to obtain uniform velocity field above the substrate. The thickness non-uniformity of GaN films grown at 600 °C was improved from 5.14% to 1.86% after the optimization of showerhead. On that basis, the influence of triethylgallium (TEG) and trimethylgallium (TMG) on low-temperature GaN growth were investigated and TEG was proved to be the more appropriate Ga source in this case. Finally, GaN film with high c -axis and in-plane orientations was obtained on sputtered AlN/sapphire template and the full width half maximums of (002) and (102) x-ray rocking curves are 0.45° and 0.57° respectively. Our results provide a practicable method for the optimization of low-temperature MOCVD, which has potential to obtain large-scale crystalline films at low temperature." @default.
- W3197238186 created "2021-09-13" @default.
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- W3197238186 date "2021-09-01" @default.
- W3197238186 modified "2023-09-27" @default.
- W3197238186 title "An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth" @default.
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- W3197238186 doi "https://doi.org/10.1088/2053-1591/ac22c5" @default.
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