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- W3198326311 abstract "Deposition of CIGS semiconductor thin films was performed at low temperature and high rate by three-stage co-evaporation process on molybdenum coated glass substrate. A vapor treatment was done in between the second and third stage by flashing CuCl <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> for 5 mins at 400 °C. A large change in morphology and crystal structure was observed after the treatment. XRD and SEM showed that small grains transformed into large grains. A smoother Ga profile was observed by SIMS measurements for the treated films as compared to as-deposited films. Furthermore, the Na profile was also modified in the recrystallized samples, with a lower content after recrystallization." @default.
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- W3198326311 date "2021-06-20" @default.
- W3198326311 modified "2023-10-16" @default.
- W3198326311 title "Vapor Treatment and In-situ Recrystallization by Copper Chloride on Cu(In,Ga)Se<sub>2</sub> Thin Film" @default.
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- W3198326311 doi "https://doi.org/10.1109/pvsc43889.2021.9518617" @default.
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