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• W3198603295 abstract "Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different approaches to improve the QD photoresponse are under investigation. In this paper, we report on the fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures for near-infrared photodetection. The photon traps represent vertical holes having 2D periodicity with a feature size of about 1 μm on the diode surface, which significantly increase the normal incidence light absorption of Ge/Si QDs due to generation of lateral optical modes in the wide telecommunication wavelength range. For a hole array periodicity of 1700 nm and hole diameter of 1130 nm, the responsivity of the photon-trapping device is found to be enhanced by about 25 times at λ=1.2 μm and by 34 times at λ≈1.6 μm relative to a bare detector without holes. These results make the micro/nanohole Ge/Si QD photodiodes promising to cover the operation wavelength range from the telecom O-band (1260–1360 nm) up to the L-band (1565–1625 nm)." @default.
• W3198603295 created "2021-09-13" @default.
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• W3198603295 date "2021-09-04" @default.
• W3198603295 modified "2023-09-25" @default.
• W3198603295 title "Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays" @default.
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• W3198603295 doi "https://doi.org/10.3390/nano11092302" @default.
• W3198603295 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/8466078" @default.
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• W3198603295 hasPublicationYear "2021" @default.
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