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• W3198891062 abstract "We report a detailed investigation of the field emission properties of transition metal dichalcogenides, namely MoS <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> and WSe <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> , taking advantage of an experimental setup realized inside a scanning electron microscope equipped with nano-manipulated probe-tips, used for positioning a tip-shaped anode at a nanometric distance from the emitting surface. For n-type WSe <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> monolayer on Si/SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> substrate, we show that electrons can be extracted also from the flat part of the flake with a current intensity up to few nanoamperes. More interestingly, we demonstrate that the field emission current can be modulated by the back-gate voltage that controls the n-type doping of the WSe <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> monolayer. Similarly, we demonstrate that monolayer MoS <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> flakes are suitable for gate-controlled field emission devices, opening the way to the development of new field emission transistors based on ultrathin materials." @default.
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• W3198891062 date "2021-07-28" @default.
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• W3198891062 title "2D transition metal dichalcogenides nanosheets as gate modulated cold electron emitters" @default.
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• W3198891062 doi "https://doi.org/10.1109/nano51122.2021.9514271" @default.
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