FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W3199565487> ?p ?o ?g. }

• W3199565487 endingPage "727" @default.
• W3199565487 startingPage "727" @default.
• W3199565487 abstract "A metal-insulator-semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition-grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEMT did. Additionally, a high turn-on voltage was obtained. The MIS-HEMT was shown to be reliable with a long lifetime. Hence, growing a high-quality Al2O3/AlN layer in an HEMT can help realize a high-performance enhancement-mode transistor with high stability, a large gate swing region, and high reliability." @default.
• W3199565487 created "2021-09-27" @default.
• W3199565487 creator A5020772012 @default.
• W3199565487 creator A5046564751 @default.
• W3199565487 creator A5050706421 @default.
• W3199565487 creator A5055026380 @default.
• W3199565487 creator A5058948324 @default.
• W3199565487 creator A5063354975 @default.
• W3199565487 creator A5071502914 @default.
• W3199565487 date "2021-09-23" @default.
• W3199565487 modified "2023-09-27" @default.
• W3199565487 title "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator" @default.
• W3199565487 cites W1647263512 @default.
• W3199565487 cites W2001986919 @default.
• W3199565487 cites W2021890362 @default.
• W3199565487 cites W2024804448 @default.
• W3199565487 cites W2069950657 @default.
• W3199565487 cites W2119440994 @default.
• W3199565487 cites W2149151998 @default.
• W3199565487 cites W2158892965 @default.
• W3199565487 cites W2305626453 @default.
• W3199565487 cites W2750608033 @default.
• W3199565487 cites W2793888605 @default.
• W3199565487 cites W2894950078 @default.
• W3199565487 cites W2895171972 @default.
• W3199565487 cites W2899624250 @default.
• W3199565487 cites W2906633729 @default.
• W3199565487 cites W2922517772 @default.
• W3199565487 cites W2945368664 @default.
• W3199565487 cites W2955593627 @default.
• W3199565487 cites W3006845905 @default.
• W3199565487 cites W3074456051 @default.
• W3199565487 cites W3099562360 @default.
• W3199565487 cites W3103000680 @default.
• W3199565487 doi "https://doi.org/10.3390/membranes11100727" @default.
• W3199565487 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/8541110" @default.
• W3199565487 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/34677492" @default.
• W3199565487 hasPublicationYear "2021" @default.
• W3199565487 type Work @default.
• W3199565487 sameAs 3199565487 @default.
• W3199565487 citedByCount "5" @default.
• W3199565487 countsByYear W31995654872022 @default.
• W3199565487 countsByYear W31995654872023 @default.
• W3199565487 crossrefType "journal-article" @default.
• W3199565487 hasAuthorship W3199565487A5020772012 @default.
• W3199565487 hasAuthorship W3199565487A5046564751 @default.
• W3199565487 hasAuthorship W3199565487A5050706421 @default.
• W3199565487 hasAuthorship W3199565487A5055026380 @default.
• W3199565487 hasAuthorship W3199565487A5058948324 @default.
• W3199565487 hasAuthorship W3199565487A5063354975 @default.
• W3199565487 hasAuthorship W3199565487A5071502914 @default.
• W3199565487 hasBestOaLocation W31995654871 @default.
• W3199565487 hasConcept C119599485 @default.
• W3199565487 hasConcept C127413603 @default.
• W3199565487 hasConcept C16115445 @default.
• W3199565487 hasConcept C162057924 @default.
• W3199565487 hasConcept C165801399 @default.
• W3199565487 hasConcept C171250308 @default.
• W3199565487 hasConcept C172385210 @default.
• W3199565487 hasConcept C189278905 @default.
• W3199565487 hasConcept C192562407 @default.
• W3199565487 hasConcept C195370968 @default.
• W3199565487 hasConcept C212702 @default.
• W3199565487 hasConcept C2779227376 @default.
• W3199565487 hasConcept C2779833192 @default.
• W3199565487 hasConcept C49040817 @default.
• W3199565487 hasConcept C69544855 @default.
• W3199565487 hasConcept C78434282 @default.
• W3199565487 hasConceptScore W3199565487C119599485 @default.
• W3199565487 hasConceptScore W3199565487C127413603 @default.
• W3199565487 hasConceptScore W3199565487C16115445 @default.
• W3199565487 hasConceptScore W3199565487C162057924 @default.
• W3199565487 hasConceptScore W3199565487C165801399 @default.
• W3199565487 hasConceptScore W3199565487C171250308 @default.
• W3199565487 hasConceptScore W3199565487C172385210 @default.
• W3199565487 hasConceptScore W3199565487C189278905 @default.
• W3199565487 hasConceptScore W3199565487C192562407 @default.
• W3199565487 hasConceptScore W3199565487C195370968 @default.
• W3199565487 hasConceptScore W3199565487C212702 @default.
• W3199565487 hasConceptScore W3199565487C2779227376 @default.
• W3199565487 hasConceptScore W3199565487C2779833192 @default.
• W3199565487 hasConceptScore W3199565487C49040817 @default.
• W3199565487 hasConceptScore W3199565487C69544855 @default.
• W3199565487 hasConceptScore W3199565487C78434282 @default.
• W3199565487 hasFunder F4320322795 @default.
• W3199565487 hasIssue "10" @default.
• W3199565487 hasLocation W31995654871 @default.
• W3199565487 hasLocation W31995654872 @default.
• W3199565487 hasLocation W31995654873 @default.
• W3199565487 hasLocation W31995654874 @default.
• W3199565487 hasLocation W31995654875 @default.
• W3199565487 hasOpenAccess W3199565487 @default.
• W3199565487 hasPrimaryLocation W31995654871 @default.
• W3199565487 hasRelatedWork W2040713852 @default.
• W3199565487 hasRelatedWork W2123299937 @default.
• W3199565487 hasRelatedWork W2744274332 @default.
• W3199565487 hasRelatedWork W2744610830 @default.
• W3199565487 hasRelatedWork W2912042326 @default.

• next