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• W3199657269 abstract "The combined effects of proton irradiation and forward gate-bias stress on the interface traps of AlGaN/GaN heterostructure have been studied in this article. It is found that the effect of proton irradiation and forward gate-bias on the shift of flat band voltage <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$V_{mathrm {FB}}$ </tex-math></inline-formula> is independent. By utilizing the frequency-dependent conductance technique, it is found that the trap density <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$D_{mathrm {T}}$ </tex-math></inline-formula> at metal/AlGaN interface decreases after proton irradiation and the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$D_{mathrm {T}}$ </tex-math></inline-formula> at most energy levels increases after the following forward gate-bias. The <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$D_{mathrm {T}}$ </tex-math></inline-formula> at AlGaN/GaN interface increases after proton irradiation and then decreases after the following forward gate-bias. The energy level range of metal/AlGaN interface traps reduces significantly under the forward gate-bias for the irradiated devices, however, that of AlGaN/GaN interface traps decreases little. In summary, the combined effect of proton irradiation and forward gate-bias stress on the interface traps is more complex than that on the bulk traps in AlGaN layer." @default.
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• W3199657269 date "2021-11-01" @default.
• W3199657269 modified "2023-10-15" @default.
• W3199657269 title "Combined Effects of Proton Irradiation and Forward Gate-Bias Stress on the Interface Traps in AlGaN/GaN Heterostructure" @default.
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• W3199657269 doi "https://doi.org/10.1109/tns.2021.3112767" @default.
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