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- W3199682743 abstract "Abstract In the current work, growth and thermoelectric characterization of tin and selenium co-doped single crystal bismuth telluride have been carried out in the range of temperature 10–400 K. The crystals show hexagonal crystal structure with R $$overline{3 }$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:mover> <mml:mn>3</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> m space group . The direction of growth, quality of the single crystals, the density of dislocation, and dopants effect on the inner plane structure of the crystals have been analyzed through high-resolution X-ray diffraction study. Energy dispersive analysis of X-rays approves the elemental composition, and field emission scanning electron microscopy shows uniform growth with micro precipitates on the surface of the crystals. Quasi degenerate and non-degenerate electrical resistivity is observed in the pristine and doped samples, respectively. Temperature-dependent Seebeck coefficient measurements confirm the n -type semiconducting nature of the pristine as well as doped samples. Temperature-dependent power factor of (Bi 0.96 Sn 0.04 ) 2 Te 2.7 Se 0.3 is found to increase by 1.1 times, and electrical resistivity reduced by 3.3 times as compared to pristine Bi 2 Te 3 ." @default.
- W3199682743 created "2021-09-27" @default.
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- W3199682743 date "2021-09-09" @default.
- W3199682743 modified "2023-10-14" @default.
- W3199682743 title "Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal" @default.
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- W3199682743 doi "https://doi.org/10.1007/s10854-021-06946-8" @default.
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