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• W3199984881 abstract "In advanced microelectronic packaging, a high-performance diffusion barrier layer is urgently required for Sn/Cu joint, to hinder the formation of CuSn intermetallic compounds (IMCs). In this work, the barrier performance of electrodeposited Ni, Co, amorphous NiW and amorphous CoW were studied. During 150 °C aging test, amorphous CoW exhibited the best barrier performance among the four barrier layers with the slowest IMC growth rate. Compared with the reaction-controlled IMCs in Sn/Co/Cu sample, the IMCs' growth rates in the other three samples were limited by different diffusion species. Due to the larger diffusion flux of Ni diffusing from NiW layer than that of Co from CoW layer, IMCs in Sn/Ni-W/Cu sample grew faster than Sn/Co-W/Cu sample. The nanoindentation test indicated that the IMCs formed in Sn/Co-W/Cu sample were less sensitive to brittle fracture than Sn/Ni-W/Cu sample. This research provides a scientific basis for the selection of barrier layers with excellent barrier performance and mechanical properties in electronic packaging." @default.
• W3199984881 created "2021-09-27" @default.
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• W3199984881 date "2021-11-01" @default.
• W3199984881 modified "2023-10-05" @default.
• W3199984881 title "Effects of amorphous Co W and Ni W barrier layers on the evolution of Sn/Cu interface" @default.
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• W3199984881 doi "https://doi.org/10.1016/j.matchar.2021.111448" @default.
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