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- W3200078703 abstract "Adding ferromagnetism into semiconductors attracts much attentions due to its potential usage of magnetic spins in novel devices, such as spin field-effect transistors. However, it remains challenging to stabilize their ferromagnetism above room temperature. Here we introduce an atomic chemical-solution strategy to grow wafer-size NiO thin films with controllable thickness down to sub-nanometer scale (0.92 nm) for the first time. Surface lattice defects break the magnetic symmetry of NiO and produce surface ferromagnetic behaviors. Our sub-nanometric NiO thin film exhibits the highest reported room-temperature ferromagnetic behavior with a saturation magnetization of 157 emu/cc and coercivity of 418 Oe. Attributed to wafer size, the easily-transferred NiO thin film is further verified in a magnetoresistance device. Our work provides a sub-nanometric platform to produce wafer-size ferromagnetic NiO thin films as atomic layer magnetic units in future transparent magnetoelectric devices." @default.
- W3200078703 created "2021-09-27" @default.
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- W3200078703 date "2021-10-18" @default.
- W3200078703 modified "2023-10-15" @default.
- W3200078703 title "Sub‐Nanometer Thick Wafer‐Size NiO Films with Room‐Temperature Ferromagnetic Behavior" @default.
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- W3200078703 doi "https://doi.org/10.1002/anie.202110185" @default.
- W3200078703 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/34534391" @default.
- W3200078703 hasPublicationYear "2021" @default.
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