Matches in SemOpenAlex for { <https://semopenalex.org/work/W3200412040> ?p ?o ?g. }
Showing items 1 to 57 of
57
with 100 items per page.
- W3200412040 abstract "We report the ALD RuO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> process using a new Ru metalorganic precursor, tricarbonyl (trimethylenemethane) ruthenium [Ru(TMM)(CO) <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> ], and molecular oxygen (O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> ) as a reactant at the relatively low temperature of 180 °C for a diffusion barrier application of Ru interconnect. RuO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin films could be prepared by controlling the reactant and precursor pulsing time ratio (t <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>o2</inf> /t <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Ru</inf> ) and the deposition pressure. The formation of RuO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> phase is generally favorable at a higher pulsing time ratio (t <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>o2</inf> /t <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Ru</inf> ) and deposition pressure. It was also demonstrated that Ru single, the mixture phase of Ru and RuO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> , and RuO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> single phase could be controllably grown with deposition condition. The RuO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> films deposited under optimized pulsing conditions showed resistivity of ~103 μΩ·cm, and a growth rate of ~0.056 nm/cycle with short incubation cycles of ~15 cycles. The diffusion barrier performance of ALD-RuO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin films against Ru is analyzed using XRD and electrical impedance analysis. According to both analyses, the non-barrier layer structure [ALD-Ru (50 nm)/Si] began to lose its stability by forming ruthenium silcides at 750 °C, while the structure with a barrier layer [ALD-Ru/ALD-RuO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> (5 nm)/Si] were stable up to 850 °C." @default.
- W3200412040 created "2021-09-27" @default.
- W3200412040 creator A5002191760 @default.
- W3200412040 creator A5007295983 @default.
- W3200412040 creator A5035336633 @default.
- W3200412040 creator A5038067008 @default.
- W3200412040 creator A5077670292 @default.
- W3200412040 date "2021-07-06" @default.
- W3200412040 modified "2023-09-23" @default.
- W3200412040 title "Atomic layer deposition of RuO<sub>2</sub>using a new metalorganic precursor as a diffusion barrier for Ru interconnect" @default.
- W3200412040 cites W1964480799 @default.
- W3200412040 cites W1967778877 @default.
- W3200412040 cites W1994823489 @default.
- W3200412040 cites W2033842533 @default.
- W3200412040 cites W2046709975 @default.
- W3200412040 cites W2094185768 @default.
- W3200412040 cites W2096359342 @default.
- W3200412040 cites W2577900668 @default.
- W3200412040 cites W3084986252 @default.
- W3200412040 doi "https://doi.org/10.1109/iitc51362.2021.9537498" @default.
- W3200412040 hasPublicationYear "2021" @default.
- W3200412040 type Work @default.
- W3200412040 sameAs 3200412040 @default.
- W3200412040 citedByCount "0" @default.
- W3200412040 crossrefType "proceedings-article" @default.
- W3200412040 hasAuthorship W3200412040A5002191760 @default.
- W3200412040 hasAuthorship W3200412040A5007295983 @default.
- W3200412040 hasAuthorship W3200412040A5035336633 @default.
- W3200412040 hasAuthorship W3200412040A5038067008 @default.
- W3200412040 hasAuthorship W3200412040A5077670292 @default.
- W3200412040 hasConcept C121332964 @default.
- W3200412040 hasConcept C185592680 @default.
- W3200412040 hasConcept C69357855 @default.
- W3200412040 hasConcept C71240020 @default.
- W3200412040 hasConcept C97355855 @default.
- W3200412040 hasConceptScore W3200412040C121332964 @default.
- W3200412040 hasConceptScore W3200412040C185592680 @default.
- W3200412040 hasConceptScore W3200412040C69357855 @default.
- W3200412040 hasConceptScore W3200412040C71240020 @default.
- W3200412040 hasConceptScore W3200412040C97355855 @default.
- W3200412040 hasLocation W32004120401 @default.
- W3200412040 hasOpenAccess W3200412040 @default.
- W3200412040 hasPrimaryLocation W32004120401 @default.
- W3200412040 hasRelatedWork W1531601525 @default.
- W3200412040 hasRelatedWork W1970974546 @default.
- W3200412040 hasRelatedWork W1990781990 @default.
- W3200412040 hasRelatedWork W1996140555 @default.
- W3200412040 hasRelatedWork W2606230654 @default.
- W3200412040 hasRelatedWork W2607424097 @default.
- W3200412040 hasRelatedWork W2748952813 @default.
- W3200412040 hasRelatedWork W2899084033 @default.
- W3200412040 hasRelatedWork W2948807893 @default.
- W3200412040 hasRelatedWork W2778153218 @default.
- W3200412040 isParatext "false" @default.
- W3200412040 isRetracted "false" @default.
- W3200412040 magId "3200412040" @default.
- W3200412040 workType "article" @default.