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- W320079767 endingPage "93" @default.
- W320079767 startingPage "51" @default.
- W320079767 abstract "Hydride vapor phase epitaxy (HVPE) was part of the very first vapor phase epitaxy processes developed for the growth of III–V semiconductor layers. HVPE's features—the most well-known being its fast growth—rely on the use of chloride gaseous growth precursors as transport agents of the group III elements. HVPE is known as a near-equilibrium growth method. This chapter revisits this concept, emphasizing its exploitation and the application of the peculiar kinetics-limited HVPE growth regimen for modern III-(V,N) compound issues. The chapter also focuses on the use of HVPE for shaping nanoscale structures. HVPE allows the achievement of a huge growth anisotropy between crystal orientations, which results in the synthesis of structures with unusually high aspect ratios." @default.
- W320079767 created "2016-06-24" @default.
- W320079767 creator A5043600259 @default.
- W320079767 creator A5052742892 @default.
- W320079767 creator A5064881200 @default.
- W320079767 creator A5079705035 @default.
- W320079767 date "2015-01-01" @default.
- W320079767 modified "2023-10-16" @default.
- W320079767 title "Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues" @default.
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