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• W3200912550 abstract "Ferroelectric multilayer films attract great attention for a wide variation of applications. The synergistic effect by combining different functional layers induces distinctive electrical properties. In this study, ferroelectric BaZr 0.2 Ti 0.8 O 3 /PbZr 0.52 Ti 0.48 O 3 /BaZr 0.2 Ti 0.8 O 3 (BZT/PZT/BZT) multilayer thin films are designed and fabricated by using the magnetron sputtering method, and a LaNiO3 (LNO) seed layer is introduced. The microstructures and electrical properties of the BZT/PZT/BZT films with and without the LNO seed layer are systematically studied. The results show that the BZT/PZT/BZT/LNO thin film exhibits much lower surface roughness and a preferred (100)-orientation growth, with the growth template and tensile stress provided by the LNO layer. Moreover, an enhanced dielectric constant, decreased dielectric loss, and improved ferroelectric properties are achieved in BZT/PZT/BZT/LNO thin films. This work reveals that the seed layer can play an important role in improving the microstructure and properties of ferroelectric multilayer films." @default.
• W3200912550 created "2021-09-27" @default.
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• W3200912550 date "2021-09-15" @default.
• W3200912550 modified "2023-10-18" @default.
• W3200912550 title "Effects of LaNiO3 Seed Layer on the Microstructure and Electrical Properties of Ferroelectric BZT/PZT/BZT Thin Films" @default.
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• W3200912550 doi "https://doi.org/10.3389/fmats.2021.732186" @default.
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