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• W3201209318 abstract "The effect of As ion implantation on the stability of SiGe/Si multilayer was systematically studied. The atomic percentage of Ge in as-grown SiGe layer was 30% in this work. A thermally stable Si0.7Ge0.3/Si multilayer with As ion implantation was attained when the rapid thermal annealing (RTA) treatment temperature did not exceed 850 oC. Significant Ge diffusion was observed for the SiGe/Si multilayer with As ion implantation when the RTA temperature was 900 °C or above. However, minor Ge diffusion was attained for the SiGe/Si multilayer without As ion implantation when the RTA treatment temperature was 900 °C. Therefore, , compared with samples without As ion implantation, the stability window of the SiGe/Si multilayer with As ion implantation should be further reduced to 850 °C. As ion implantation plays a critical role in the stability of SiGe/Si multilayer, as it promotes the diffusion of Ge. Consequently, based on the stability of the SiGe/Si multilayer, the highest RTA treatment temperature of 850 °C is proposed for the gate-all-around (GAA) device fabrication process." @default.
• W3201209318 created "2021-09-27" @default.
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• W3201209318 date "2021-09-01" @default.
• W3201209318 modified "2023-09-26" @default.
• W3201209318 title "Investigation of thermal stability of Si0.7Ge0.3Si stacked multilayer with As ion-implantation" @default.
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• W3201209318 doi "https://doi.org/10.1088/2053-1591/ac08ce" @default.
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