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- W3201722858 abstract "Two-dimensional layered transition-metal dichalcogenides have drawn enormous interest because of their desired electrical and mechanical properties for making various devices with attractive functions. However, the device fabrication process typically introduces lithography-induced contamination and damage to such fragile and sensitive atomically layered materials. Here, we present a multiplexing lithography process system capable of directly generating few-layer molybdenum disulfide (MoS2) feature arrays with no need of additional lithographic or etching steps. This process combines a site-selective growth scheme based on mechanically generated triboelectric charge patterns and programmable actuation of rubbing templates bearing 2D feature arrays. To achieve a good processing uniformity, we have systematically investigated the effects of implementation of an air cushion on the rubbing template, various interfacing layers on the rubbing features, as well as mechanical load on rubbing templates and substrates. Using this process, we have demonstrated the growth of “L” shaped few-layer MoS2 arrays on SiO2/Si substrates with a good yield." @default.
- W3201722858 created "2021-10-11" @default.
- W3201722858 creator A5031651001 @default.
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- W3201722858 date "2021-10-06" @default.
- W3201722858 modified "2023-09-24" @default.
- W3201722858 title "Multiplexing implementation of rubbing-induced site-selective growth of MoS<sub>2</sub> feature arrays" @default.
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- W3201722858 doi "https://doi.org/10.1116/6.0001268" @default.
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