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• W3201725462 abstract "Abstract In this work, we experimentally demonstrate comprehensively optimized anti-ferroelectric HfAlO x films, achieving high saturated polarization charge density and doping concentration in doped-HfO 2 films. This allowed us to produce an ultrathin anti-ferroelectric energy storage device with high energy storage density (ESD). With the optimized deposition temperature of 300 °C, Hf:Al ratio of 18:1 and an electrode of tungsten, a 6.5 nm thick anti-ferroelectric HfAlO x film is realized with a high ESD of 63.7 J cm −3 , which is the thinnest anti-ferroelectric film among all the reported works, associated with such a high ESD. This not only provides an effective way to improve the scaling ability of anti-ferroelectric HfAlO x films, but also demonstrates a new approach to strengthen the control of the phase transition." @default.
• W3201725462 created "2021-10-11" @default.
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• W3201725462 date "2021-10-07" @default.
• W3201725462 modified "2023-10-16" @default.
• W3201725462 title "A 6.5 nm thick anti-ferroelectric HfAlO _x film for energy storage devices with a high density of 63.7 J cm⁻³" @default.
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• W3201725462 doi "https://doi.org/10.1088/1361-6463/ac29e5" @default.
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