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- W3202065529 abstract "Energy efficiency, superior performance, and long-term reliability are crucial advantages of GaAs-based semiconductor laser diodes featuring strained type-I quantum wells as active regions. This cl..." @default.
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- W3202065529 date "2021-09-29" @default.
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- W3202065529 title "Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates" @default.
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