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- W3202330845 abstract "The poor interface quality of the Silicon Carbide/oxide (SiC/SiO2) interface severely degrades the electron surface channel mobility in SiC-based power devices. Based on transfer characteristic simulations (with a deck calibrated to experimental data), this work predicts improved mobility with stress engineering, a well-established technique for performance enhancement in low power silicon (Si) transistor technology. Process simulation of Si and SiC-based devices with Silicon Nitride (Si3N4) stressor layer has been carried out to estimate the stress generated in the channel. SiC D-MOSFET We have also computed the effect of varying stress magnitude, direction, and position in the device." @default.
- W3202330845 created "2021-10-11" @default.
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- W3202330845 date "2021-01-01" @default.
- W3202330845 modified "2023-09-27" @default.
- W3202330845 title "Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs" @default.
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- W3202330845 doi "https://doi.org/10.1109/jeds.2021.3116098" @default.
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