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- W3202741759 abstract "Abstract Resistive Random-Access Memory (ReRAM) is considered for next generation non-volatile memory applications. ReRAM has gained interest due to its simple structure, lower switching voltages, high packaging density, fast switching speeds, and feasible integration into CMOS processing. Transition-Metal-Oxides have shown to be compatible materials for RRAM applications. Among them, ZnO is one of the most promising materials owing to being fab-friendly and having a high dielectric constant of 10. ReRAM devices with ZnO as the active material are characterized and investigated in this work. Both symmetric and asymmetric metal contacts are used for designing the ReRAMs. The current-voltage and thermal characteristics of different devices are studied, and underlying mechanisms are analyzed. It was observed that the metal with low thermal conductivity, dissipates less heat and causes high temperature in the ON state. Also, a resistance ratio of the order of 1.3 x 10 5 is obtained, which shows the robustness of the device with an optimal memory window performance. Further, the devices are fabricated and compared with the simulated devices." @default.
- W3202741759 created "2021-10-11" @default.
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- W3202741759 date "2021-08-23" @default.
- W3202741759 modified "2023-09-27" @default.
- W3202741759 title "Electrical and thermal analysis of Symmetric and Asymmetric metal contacts in Resistive Switching Devices" @default.
- W3202741759 doi "https://doi.org/10.21203/rs.3.rs-720862/v1" @default.
- W3202741759 hasPublicationYear "2021" @default.
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