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- W3202874405 abstract "Abstract Metal–organic frameworks (MOFs) have recently attracted a great deal of attention especially as conceivable advanced gate dielectrics for next‐generation field‐effect transistors (FETs) and memory device applications. Dielectric surface charge retention mapping is essential for gauging the leakage current and threshold voltage stability. Due to a dearth of systematic real‐time surface charge probing of MOFs dielectrics, in this work, the nanoscale Kelvin probe force microscopy (KPFM) technique is employed for the contact potential difference (CPD) analysis of developed hybrid copper–metal–organic clusters (Cu‐MOCs)/Si systems. Films are synthesized through the sol‐gel process consisting of copper metal core linked with organic ligands. With 3V positive and negative DC bias, charge injection offset between positive and negative bias is observed to be ≈ 190 mV, indicating the intrinsic Fermi level alignment between KPFM tip and sample surface charges. The high‐resolution surface CPD mappings bring forth the white ( ≈ 98 mV) and black ( ≈− 91 mV) contrast profiles with hole (5.09 × 10 12 cm −2 ) and electron (4.74 × 10 12 cm −2 ) charge densities. Also, the 17 h time‐lapse enables the holes and electrons CPD mapping diameter shrinkage by ≈ 32% and 46%, respectively. In furtherance, a conductive filament model for host‐guest proton‐assisted conduction with charge hopping through fixed/mobile ions is proposed." @default.
- W3202874405 created "2021-10-11" @default.
- W3202874405 creator A5027079866 @default.
- W3202874405 creator A5054822912 @default.
- W3202874405 creator A5065033495 @default.
- W3202874405 date "2021-09-26" @default.
- W3202874405 modified "2023-10-17" @default.
- W3202874405 title "Nanoscale Probing of Surface Charges in Functional Copper‐Metal Organic Clusters by Kelvin Probe Force Microscopy for Field‐Effect Transistors" @default.
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- W3202874405 doi "https://doi.org/10.1002/admi.202100529" @default.
- W3202874405 hasPublicationYear "2021" @default.
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