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• W3202956879 abstract "A 600 V-rated insulated gate bipolar transistor (IGBT) with improved turn-on transient characteristics is proposed and investigated by simulation. The proposed IGBT features a built-in voltage-clamping structure. The floating <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${p}$ </tex-math></inline-formula> -body adjacent to the trench gate is clamped at an appropriately high voltage before turn-on. This slows down the hole accumulation process in the floating <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>p</i> -body during turn-on transient, and thus the self-charging displacement current through the gate capacitance is reduced. The increasing rate for the gate voltage ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dV</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GE</sub> / <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dt</i> ) is then reduced. As a result, the proposed IGBT achieves a 25% decrease in collector current ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$I_C$ </tex-math></inline-formula> ) overshoot and 34% decrease in <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dI</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>C</sub> / <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dt</i> , when compared with the conventional IGBT with the same turn-on loss ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>E</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> ), at IC = 250 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> under hard-switching. Its fabrication process is compatible with conventional trench IGBT." @default.
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• W3202956879 date "2021-10-01" @default.
• W3202956879 modified "2023-10-16" @default.
• W3202956879 title "A Novel IGBT With Voltage-Clamping for Turn-on Overshoot Suppression Under Hard-Switching" @default.
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• W3202956879 doi "https://doi.org/10.1109/ted.2021.3105948" @default.
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