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• W3203037583 abstract "The sequential implantation of Mg and N ions into GaN was investigated using conventional rapid thermal annealing and ultra-high-pressure annealing (UHPA). In cathodoluminescence, the green luminescence related to nitrogen vacancies (VNs) was mostly suppressed at the Mg/N ratio of 0.5–1.0, whereas the donor–acceptor pair (DAP) emission as a signature of Mg acceptors was maintained high. The excess N implantation reduced the DAP emission through the formation of nonradiative recombination centers. The combined process of optimal Mg/N implantation and UHPA at 1673 K improved ohmic contacts by increasing Mg concentration and suppressing VNs near the surface." @default.
• W3203037583 created "2021-10-11" @default.
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• W3203037583 date "2021-10-12" @default.
• W3203037583 modified "2023-10-16" @default.
• W3203037583 title "Effects of the sequential implantation of Mg and N ions into GaN for p-type doping" @default.
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• W3203037583 doi "https://doi.org/10.35848/1882-0786/ac2ae7" @default.
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