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- W3203384377 endingPage "114994" @default.
- W3203384377 startingPage "114994" @default.
- W3203384377 abstract "Two-dimensional (2D) metal dichalcogenides have recently fascinated the consideration of researchers due to their exceptional electronic and optical characteristics. Despite this, the higher photo-generated carrier recombination rate constrains their technical utilization. Implementing a promising approach may result in the construction of 2D heterostructures, which may improve photocatalytic activity. This article presents the electronic structure, optical, thermodynamical, and photocatalytic characteristics of MoSe2/GaN heterostructures. In 2D-MoSe2/GaN, the MoSe2 and GaN nanosheets interact through the van der Waals forces with a binding energy of −1.72 eV. The electronic structures of the heterostructure confirm that it is a type-II indirect band-gap semiconductor with a band-gap of 1.71 eV. Work function studies revealed that the studied heterojunctions exhibit enhanced photocatalytic activity." @default.
- W3203384377 created "2021-10-11" @default.
- W3203384377 creator A5027312724 @default.
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- W3203384377 date "2022-01-01" @default.
- W3203384377 modified "2023-10-18" @default.
- W3203384377 title "Theoretical investigation of electronic and optical properties of the 2D-MoSe2/GaN heterostructure nanosheet" @default.
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- W3203384377 doi "https://doi.org/10.1016/j.physe.2021.114994" @default.
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