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• W3203453502 endingPage "695" @default.
• W3203453502 startingPage "695" @default.
• W3203453502 abstract "SID Symposium Digest of Technical PapersVolume 52, Issue S2 p. 695-695 Poster Session: P-1: AMD P-1.6: Characteristics of High Voltage Corbino a-IGZO Thin-film Transistor Jiaquan Kong, Jiaquan Kong State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorXiaojie Li, Xiaojie Li State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorChuan Liu, Chuan Liu State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorHai Ou, Hai Ou State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorJuncong She, Juncong She State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorShaozhi Deng, Shaozhi Deng State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorJun Chen, Corresponding Author Jun Chen stscjun@mail.sysu.edu.cn State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this author Jiaquan Kong, Jiaquan Kong State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorXiaojie Li, Xiaojie Li State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorChuan Liu, Chuan Liu State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorHai Ou, Hai Ou State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorJuncong She, Juncong She State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorShaozhi Deng, Shaozhi Deng State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this authorJun Chen, Corresponding Author Jun Chen stscjun@mail.sysu.edu.cn State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 People's Republic of ChinaSearch for more papers by this author First published: 26 August 2021 https://doi.org/10.1002/sdtp.15254AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share 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Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat No abstract is available for this article. Volume52, IssueS2International Conference on Display Technology (ICDT 2021)August 2021Pages 695-695 RelatedInformation" @default.
• W3203453502 created "2021-10-11" @default.
• W3203453502 creator A5016941837 @default.
• W3203453502 creator A5035504008 @default.
• W3203453502 creator A5050592869 @default.
• W3203453502 creator A5065050773 @default.
• W3203453502 creator A5068713962 @default.
• W3203453502 creator A5082857859 @default.
• W3203453502 creator A5084727263 @default.
• W3203453502 date "2021-08-01" @default.
• W3203453502 modified "2023-09-24" @default.
• W3203453502 title "P‐1.6: Characteristics of High Voltage Corbino a‐IGZO Thin‐film Transistor" @default.
• W3203453502 cites W1999589524 @default.
• W3203453502 cites W2042303669 @default.
• W3203453502 cites W2530851546 @default.
• W3203453502 cites W2625097832 @default.
• W3203453502 cites W3004197553 @default.
• W3203453502 doi "https://doi.org/10.1002/sdtp.15254" @default.
• W3203453502 hasPublicationYear "2021" @default.
• W3203453502 type Work @default.
• W3203453502 sameAs 3203453502 @default.
• W3203453502 citedByCount "0" @default.
• W3203453502 crossrefType "journal-article" @default.
• W3203453502 hasAuthorship W3203453502A5016941837 @default.
• W3203453502 hasAuthorship W3203453502A5035504008 @default.
• W3203453502 hasAuthorship W3203453502A5050592869 @default.
• W3203453502 hasAuthorship W3203453502A5065050773 @default.
• W3203453502 hasAuthorship W3203453502A5068713962 @default.
• W3203453502 hasAuthorship W3203453502A5082857859 @default.
• W3203453502 hasAuthorship W3203453502A5084727263 @default.
• W3203453502 hasConcept C11413529 @default.
• W3203453502 hasConcept C119599485 @default.
• W3203453502 hasConcept C127413603 @default.
• W3203453502 hasConcept C138331895 @default.
• W3203453502 hasConcept C26517878 @default.
• W3203453502 hasConcept C38652104 @default.
• W3203453502 hasConcept C41008148 @default.
• W3203453502 hasConcept C48103436 @default.
• W3203453502 hasConcept C61696701 @default.
• W3203453502 hasConcept C76155785 @default.
• W3203453502 hasConceptScore W3203453502C11413529 @default.
• W3203453502 hasConceptScore W3203453502C119599485 @default.
• W3203453502 hasConceptScore W3203453502C127413603 @default.
• W3203453502 hasConceptScore W3203453502C138331895 @default.
• W3203453502 hasConceptScore W3203453502C26517878 @default.
• W3203453502 hasConceptScore W3203453502C38652104 @default.
• W3203453502 hasConceptScore W3203453502C41008148 @default.
• W3203453502 hasConceptScore W3203453502C48103436 @default.
• W3203453502 hasConceptScore W3203453502C61696701 @default.
• W3203453502 hasConceptScore W3203453502C76155785 @default.
• W3203453502 hasIssue "S2" @default.
• W3203453502 hasLocation W32034535021 @default.
• W3203453502 hasOpenAccess W3203453502 @default.
• W3203453502 hasPrimaryLocation W32034535021 @default.
• W3203453502 hasRelatedWork W1985521312 @default.
• W3203453502 hasRelatedWork W2071744373 @default.
• W3203453502 hasRelatedWork W2247532853 @default.
• W3203453502 hasRelatedWork W2361533089 @default.
• W3203453502 hasRelatedWork W2373297964 @default.
• W3203453502 hasRelatedWork W2382118894 @default.
• W3203453502 hasRelatedWork W2384175447 @default.
• W3203453502 hasRelatedWork W2597824395 @default.
• W3203453502 hasRelatedWork W2899084033 @default.
• W3203453502 hasRelatedWork W4230050435 @default.
• W3203453502 hasVolume "52" @default.
• W3203453502 isParatext "false" @default.
• W3203453502 isRetracted "false" @default.
• W3203453502 magId "3203453502" @default.
• W3203453502 workType "article" @default.