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- W3204172639 abstract "Ovonic threshold switch (OTS) has been considered for use as a selector in 3-dimensional (3D) cross-point memories. Arsenic-containing materials such as the Ge-As-Si-Te-N system have been proposed for the switching of OTS devices. However, as is toxic to both humans and the environment, such materials are generally avoided. Here, high-performance OTS devices are demonstrated using As-free material, i.e., a Ga-N-Sb-Te layer, which exhibits promising threshold switching characteristics. The Ga-N-Sb-Te thin film was deposited by co-sputtering process at 298 K. The OTS device based on the Ga-N-Sb-Te material exhibited a large ON current density (>10 MA/cm 2 ) with long cycling endurance (>10 7 ), thus can be considered a promising candidate for use as a selector for 3D cross-point memories." @default.
- W3204172639 created "2021-10-11" @default.
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- W3204172639 date "2021-12-01" @default.
- W3204172639 modified "2023-10-01" @default.
- W3204172639 title "Arsenic-free ovonic threshold switch for next-generation selectors in 3-dimensional cross-point memories" @default.
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- W3204172639 doi "https://doi.org/10.1016/j.mtcomm.2021.102849" @default.
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