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- W3204283359 abstract "As a two-dimensional carbon based semiconductor, C 3 N acts as a promising material in many application areas. However, the basic physical properties such as Raman spectrum properties of C 3 N is still not clear. In this paper, we clarify the Raman spectrum properties of multilayer C 3 N. Moreover, the stacking driven Raman spectra change of multilayer C 3 N is also discussed. High-quality stacking C3N was obtained by UV-induced graft polymerization method. Stacking driven Raman spectrum of C3N was firstly investigated detailly with both theoretical calculation and experimental results, revealing abundant structural information of C3N." @default.
- W3204283359 created "2021-10-11" @default.
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- W3204283359 date "2022-05-01" @default.
- W3204283359 modified "2023-10-02" @default.
- W3204283359 title "Stacking driven Raman spectra change of carbon based 2D semiconductor C3N" @default.
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- W3204283359 doi "https://doi.org/10.1016/j.cclet.2021.09.098" @default.
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