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• W3204408166 abstract "Hexagonal boron nitride (h-BN), with its excellent stability, flat surface, and large bandgap, plays a role in a variety of fundamental science and technology fields. The past few years have witnessed significant development in the scaled growth of h-BN single crystals. Currently, the size of h-BN crystal can be reached up to wafer-scale, paving the way towards industrial production and commercial applications. In this minireview, recent academic breakthroughs regarding the controlled growth of large-sized h-BN single crystals via chemical vapor deposition (CVD) are presented. The as-developed technique in terms of growth parameters, choice of catalysts, and the mechanism is fully emphasized, offering a guideline in enhancing the size and quality of h-BN. Several typical metal catalysts have been used in shaping scaled h-BN single crystals, of which the metal Cu substrate has drawn the most intensive attention. The significant advances in expanding the size of h-BN single crystals will largely push forward the way to h-BN industrialization and commercialization. The past few years have witnessed significant development in the scaled growth of h-BN single crystals. Currently, the size of h-BN crystal can be reached up to wafer-scale, paving the way towards industrial production and commercial applications. In this minireview, recent academic breakthroughs regarding controlled growth of large-sized h-BN single crystals via chemical vapor deposition (CVD) are present. The as-developed technique in terms of growth parameters, choice of catalysts and mechanism is fully emphasized, offering a guideline in enhancing size and quality of h-BN. Several typical metal catalysts are exhibited in shaping scaled h-BN single crystals, of which the metal Cu substrate has drawn the most intensive attentions." @default.
• W3204408166 created "2021-10-11" @default.
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• W3204408166 date "2021-01-01" @default.
• W3204408166 modified "2023-10-08" @default.
• W3204408166 title "A minireview on chemical vapor deposition growth of wafer-scale monolayer <i>h</i>-BN single crystals" @default.
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• W3204408166 doi "https://doi.org/10.1039/d1nr04034k" @default.
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