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- W3204656463 abstract "In this paper, the fundamental mechanisms of defects formation and procedures used to improve the structural quality of GaAs grown on Si are discussed. Patterned growth, strained-layer superlattices, and proper thermal cycling are promising approaches to help achieve high quality GaAs layers grown on Si substrates. 55 refs., 9 figs." @default.
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- W3204656463 date "1989-09-01" @default.
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- W3204656463 title "Heteroepitaxy of GaAs on Si: Methods to decrease the defect density in the epilayer" @default.
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