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• W3204656723 endingPage "100603" @default.
• W3204656723 startingPage "100603" @default.
• W3204656723 abstract "Doped polysilicon-based passivating contacts are expected to be a key technology to enable higher efficiency in mass-produced silicon solar cells in coming years, with the world market share expected to increase almost 9-fold to 35% in 2031. The excellent carrier selectivity of passivated contacts enables low-resistance extraction of carriers without compromising surface passivation and has been instrumental in recent advances in high-efficiency solar cells. Here, we report on the application of phosphorus-doped polysilicon passivating contacts on large-area screen-printed n-type silicon solar cells, using industrially viable fabrication processes. A champion cell efficiency of 24.79% is reported, as independently measured by ISFH-CalTeC on a 163.75 × 163.75-mm solar cell. Detailed characterization and simulation are applied to investigate the primary losses and pathways for further improvement of the state-of-the-art industrial high-efficiency solar cell, revealing that the front-side boron-diffused region accounts for around 63% of the electrical losses." @default.
• W3204656723 created "2021-10-11" @default.
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• W3204656723 date "2021-10-01" @default.
• W3204656723 modified "2023-10-14" @default.
• W3204656723 title "Detailed loss analysis of 24.8% large-area screen-printed n-type solar cell with polysilicon passivating contact" @default.
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• W3204656723 doi "https://doi.org/10.1016/j.xcrp.2021.100603" @default.
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