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• W3204682244 endingPage "107037" @default.
• W3204682244 startingPage "107037" @default.
• W3204682244 abstract "Gallium nitride (GaN) is a promising material for high-frequency and high-power electronics owing to its high thermal stability, wide bandgap, and high breakdown voltage. Monocrystalline GaN films are usually produced by metal organic chemical vapor phase deposition using Si, SiC, or Al2O3 as the substrate. However, the difference in lattice constants and thermal expansion coefficients causes many defects in GaN epilayers. In particular, the formation of twins will strongly influence the electronic properties of GaN-based devices. In this study, the solidification process of GaN was simulated by molecular dynamics at a cooling rate of 1012 K/s, and the twin structures in GaN were discussed. The results of this simulation showed two types of twins, including coherent twin and rotating twin, which were analyzed by visualization technology. The formation of twins was related to the coexistence of zinc blende and wurtzite phases. Furthermore, the types of twins were closely associated to the stacking ways of zinc blende and wurtzite structures. In general, it is essential to study the microstructure and the structural evolution of twin GaN, in order to give references to experiments about the growth and characteristics of twins." @default.
• W3204682244 created "2021-10-11" @default.
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• W3204682244 date "2021-11-01" @default.
• W3204682244 modified "2023-10-16" @default.
• W3204682244 title "Simulation study on the diversity and characteristics of twin structures in GaN" @default.
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• W3204682244 doi "https://doi.org/10.1016/j.spmi.2021.107037" @default.
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