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• W3204774927 abstract "We extract an AlGaN surface state spectrum with a density ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${D}_{text{SS}}$ </tex-math></inline-formula> ) ranging between <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$1.4times10$ </tex-math></inline-formula> <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$4.7times10$ </tex-math></inline-formula> <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> eV <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−1</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−2</sup> . The low <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${D}_{text{SS}}$ </tex-math></inline-formula> is achieved with <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>in situ</i> SiN passivation. <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${D}_{text{SS}}$ </tex-math></inline-formula> is extracted from ungated AlGaN/AlN/GaN heterostructures with varied AlN thicknesses between 0 and 2 nm: increased AlN thicknesses in heterostructures monotonously increase two-dimensional electron gas (2DEG) densities <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${N}_{text{sh}}$ </tex-math></inline-formula> and AlGaN surface potential energies <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${q} {varphi } _{text{s}}$ </tex-math></inline-formula> , and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${D}_{text{SS}}$ </tex-math></inline-formula> is extracted with <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$boldsymbol {Delta } {N}_{text{sh}}$ </tex-math></inline-formula> – <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$boldsymbol {Delta } {varphi }_{text{s}}$ </tex-math></inline-formula> correlations. The <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${D}_{text{SS}}$ </tex-math></inline-formula> extraction methodology in this work features calibrated polarization charge values, Hartree approximation-based 2DEG profile calculation, and incorporated C-doped GaN (C-GaN) substrate impact on 2DEG. We also extract the charge neutrality level at the AlGaN surface, which is ~0.95 eV below conduction band minimum." @default.
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• W3204774927 date "2021-11-01" @default.
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• W3204774927 title "Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics" @default.
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• W3204774927 doi "https://doi.org/10.1109/ted.2021.3115086" @default.
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