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- W3204884224 abstract "One Stoichiometric and three non-stoichiometric compounds of 0.5BaTiO3-0.5BiMg2/3Nb1/3O3 (BT-BMN) were prepared using a conventional solid-state route. Two of the non-stoichiometric compounds had a 2 mol.% deficiency on the A-site where ‘A’ corresponds to Bi and Ba cations. Whereas the remaining one sample was fabricated with a 2 mol.% excess of Bi. X-ray diffraction revealed formation of a single-phase cubic perovskite structure except for 2 mol.% Bi excess sample where an additional phase of Bi2O3 was formed. Microstructural analysis of the sintered samples showed a dense microstructure comprised of hexagonal- and rectangle-like grains, consistent with the relative density >94%. The elemental mapping showed no noticeable non-uniformity in the chemical composition of the grains. From the analysis of the dielectric data, it was observed that deficiencies on A-site have helped in enhancing the dielectric loss window for BT-BMN while maintaining the relative permittivity. A relatively high maximum polarization Pmax = 3.7 μC/cm2 was observed at 50 kV/cm-1 for the -2Bi sample. Moreover, -2Bi showed a low dielectric loss compared to stoichiometric sample and temperature stable relative permittivity (690 ± 15%) across 30–600 °C. While no material is defect free, it is important to note that the intentional removal of A-site cations can result in creation of additional oxygen vacancies according to (2VBi‴=3VO⋅⋅) and (VBa″=VO⋅⋅). It is suggested that the presence of A-O vacancy pairs may be enhancing the insulation resistance by trapping the free electrons within these materials." @default.
- W3204884224 created "2021-10-11" @default.
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- W3204884224 date "2021-11-01" @default.
- W3204884224 modified "2023-09-30" @default.
- W3204884224 title "Effect of non-stoichiometry on dielectric properties of BaTiO3-BiMg2/3Nb1/3O3 ceramics" @default.
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- W3204884224 doi "https://doi.org/10.1016/j.jics.2021.100190" @default.
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