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• W3205004429 startingPage "2759" @default.
• W3205004429 abstract "A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluctuations. This approach provides the analytical formulation of the shot noise as a function of the applied voltages. The model performs well in predicting the Fano factor for shot noise in the SD and gate tunneling currents." @default.
• W3205004429 created "2021-10-25" @default.
• W3205004429 creator A5017817176 @default.
• W3205004429 date "2021-10-18" @default.
• W3205004429 modified "2023-10-14" @default.
• W3205004429 title "Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs" @default.
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• W3205004429 doi "https://doi.org/10.3390/nano11102759" @default.
• W3205004429 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/8538198" @default.
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• W3205004429 hasPublicationYear "2021" @default.
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