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• W3205571600 endingPage "2475" @default.
• W3205571600 startingPage "2475" @default.
• W3205571600 abstract "<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m1> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>SnO</mml:mi> </mml:mrow> <mml:mn>2</mml:mn> </mml:msub> </mml:mrow> </mml:math> has attracted considerable attention due to its wide bandgap, large exciton binding energy, and outstanding electrical and optoelectronic features. Owing to the lack of reliable and reproducible p-type <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m2> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>SnO</mml:mi> </mml:mrow> <mml:mn>2</mml:mn> </mml:msub> </mml:mrow> </mml:math> , many challenges on developing <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m3> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>SnO</mml:mi> </mml:mrow> <mml:mn>2</mml:mn> </mml:msub> </mml:mrow> </mml:math> -based optoelectronic devices and their practical applications still remain. Herein, single-crystal <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m4> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>SnO</mml:mi> </mml:mrow> <mml:mn>2</mml:mn> </mml:msub> </mml:mrow> </mml:math> microwires (MWs) are acquired via the self-catalyzed approach. As a strategic alternative, <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m5> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi mathvariant=normal>n</mml:mi> <mml:mtext>-</mml:mtext> <mml:mi>SnO</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msub> </mml:mrow> </mml:math> MW/p-GaN heterojunction was constructed, which exhibited selectable dual-functionalities of light-emitting and photodetection when operated by applying an appropriate voltage. The device illustrated a distinct near-ultraviolet light-emission peaking at <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m6> <mml:mrow> <mml:mo form=prefix>∼</mml:mo> <mml:mn>395.0</mml:mn> <mml:mtext> </mml:mtext> <mml:mi>nm</mml:mi> </mml:mrow> </mml:math> and a linewidth <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m7> <mml:mrow> <mml:mo form=prefix>∼</mml:mo> <mml:mn>50</mml:mn> <mml:mtext> </mml:mtext> <mml:mi>nm</mml:mi> </mml:mrow> </mml:math> . Significantly, the device characteristics, in terms of the main peak positions and linewidth, are nearly invariant as functions of various injection current, suggesting that quantum-confined Stark effect is essentially absent. Meanwhile, the identical <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m8> <mml:mrow> <mml:mi mathvariant=normal>n</mml:mi> <mml:mtext>-</mml:mtext> <mml:msub> <mml:mrow> <mml:mi>SnO</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msub> </mml:mrow> </mml:math> MW/p-GaN heterojunction can also achieve photovoltaic-type light detection. The device can steadily feature ultraviolet photodetecting ability, including the ultraviolet/visible rejection ratio ( <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m9> <mml:msub> <mml:mi>R</mml:mi> <mml:mrow> <mml:mn>360</mml:mn> <mml:mtext> </mml:mtext> <mml:mi>nm</mml:mi> </mml:mrow> </mml:msub> <mml:mo>/</mml:mo> <mml:msub> <mml:mi>R</mml:mi> <mml:mrow> <mml:mn>400</mml:mn> <mml:mtext> </mml:mtext> <mml:mi>nm</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m10> <mml:mrow> <mml:mo form=prefix>∼</mml:mo> <mml:mn>1.5</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> <mml:mn>3</mml:mn> </mml:msup> </mml:mrow> </mml:math> , high photodark current ratio of <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m11> <mml:mrow> <mml:msup> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> <mml:mn>5</mml:mn> </mml:msup> </mml:mrow> </mml:math> , fast response speed of 9.2/51 ms, maximum responsivity of 1.5 A/W, and detectivity of <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m12> <mml:mrow> <mml:mn>1.3</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> <mml:mrow> <mml:mn>13</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> </mml:math> Jones under 360 nm light at <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m13> <mml:mrow> <mml:mo form=prefix>−</mml:mo> <mml:mn>3</mml:mn> <mml:mtext> </mml:mtext> <mml:mi mathvariant=normal>V</mml:mi> </mml:mrow> </mml:math> bias. Therefore, the bifunctional device not only displays distinct near-ultraviolet light emission, but also has the ability of high-sensitive ultraviolet photodetection. The novel design of <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m14> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi mathvariant=normal>n</mml:mi> <mml:mtext>-</mml:mtext> <mml:mi>SnO</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msub> </mml:mrow> </mml:math> MW/p-GaN heterojunction bifunctional systems is expected to open doors to practical application of <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=m15> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>SnO</mml:mi> </mml:mrow> <mml:mn>2</mml:mn> </mml:msub> </mml:mrow> </mml:math> microstructures/nanostructures for large-scale device miniaturization, integration and multifunction in next-generation high-performance photoelectronic devices." @default.
• W3205571600 created "2021-10-25" @default.
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• W3205571600 date "2021-11-19" @default.
• W3205571600 modified "2023-10-14" @default.
• W3205571600 title "Bifunctional ultraviolet light-emitting/detecting device based on a SnO₂ microwire/p-GaN heterojunction" @default.
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• W3205571600 doi "https://doi.org/10.1364/prj.441999" @default.
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