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- W3205965765 abstract "Some reliability limitations are the result of increasing electric field strength in MOS devices where the supply voltage does not decline in proportion to the decrease in the size of components. Degradation of devices occurs due to the action of hot carriers and breakdown of very thin films of the gate insulating oxide. The problems of decreasing reliability associated with the exposure to hot carriers and with degradation of circuit characteristics under the influence of these carriers are aggravated with a decline in the geometric dimensions of elements in CMOS integrated circuits. The parameters of the degradation process of field-effect n-MOS transistors are carried out. They are caused by the tunneling injection of carriers which differ in the oxide type: standard, grown by thermal oxidation, thermally nitrided, which has a number of advantages over the previous one, in particular, higher resistance to the action of hot electrons, and reoxidized thermally nitrided, characterized by a smaller number of electron traps formed during nitriding, as well as generated surface states. The modes of oxide production have a significant effect on its dielectric properties including the density of charged traps and surface states and resistance to the generation of the latter at high fields which should lead to noticeable differences between MOS-FET, and gate oxide dielectrics of various types." @default.
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- W3205965765 date "2021-10-01" @default.
- W3205965765 modified "2023-09-25" @default.
- W3205965765 title "Designing elements of MOS circuits resistant to destabilizing factors" @default.
- W3205965765 doi "https://doi.org/10.1088/1742-6596/2032/1/012111" @default.
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