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• W3206331310 abstract "This work presents a design approach for substantial improvement of the electrical performance in short-channel organic thin-film transistors (TFTs). The design combines features that can improve charge injection to significantly reduce the contact resistance which limits performance of short-channel organic TFTs. Additionally, this design is very effective at mitigating short-channel effects that can be dominant in nanoscale TFTs. TFTs were fabricated by using the semiconductors dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) and pentacene with channel lengths in the ranges 200–800 nm and 10–100 nm, respectively. The total source-to-drain resistance is reduced to about 50 ohm·cm, which is among the lowest values reported for organic TFTs." @default.
• W3206331310 created "2021-10-25" @default.
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• W3206331310 date "2021-10-17" @default.
• W3206331310 modified "2023-10-16" @default.
• W3206331310 title "Nanospike Electrode Designs for Improved Electrical Performance in Nanoscale Organic Thin-Film Transistors" @default.
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• W3206331310 doi "https://doi.org/10.1021/acsaelm.1c00813" @default.
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