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• W3206576327 abstract "Insulated gate bipolar transistor (IGBT) junction temperature monitoring is crucial for converter's healthy management and condition monitoring. However, most conventional IGBT junction temperature estimation methods are device-level, which means that monitoring junction temperatures of all IGBTs in converters require the same number of monitoring units as IGBTs, which is of high complexity and cost. A converter-level IGBT junction temperature estimation method based on the dc bus voltage ringing is proposed in this article. The peak values of the bus voltage ringing during switching transient display a linear dependence on the junction temperatures of the corresponding switching IGBTs. Hence, the bus voltage ringing can be used for estimating the junction temperatures of the IGBTs in a converter. The validity of the proposed method is verified by experiments on a double-pulse and three-phase converter. Besides, implementation schemes and calibration approaches for practical applications are discussed. The proposed method has a higher resolution as compared with a traditional <sc xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</small> -state voltage-based IGBT junction temperature monitoring method. Besides, the proposed method reduces the circuit complexity, size, and cost, and it is easy to install. Moreover, the proposed method has a fast response and high resolution, and it does not disturb the normal operation. The proposed method is independent of bond wire degradation of the IGBT module." @default.
• W3206576327 created "2021-10-25" @default.
• W3206576327 creator A5007481683 @default.
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• W3206576327 date "2022-04-01" @default.
• W3206576327 modified "2023-10-10" @default.
• W3206576327 title "A Novel Converter-Level IGBT Junction Temperature Estimation Method Based on the Bus Voltage Ringing" @default.
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• W3206576327 doi "https://doi.org/10.1109/tpel.2021.3119700" @default.
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