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- W3206705088 abstract "Theresistive switching behavior in resistive random access memories(RRAMs) using atomic-layer-deposited Ga2O3/ZnOcomposite film as the dielectric was investigated. By alternativelyatomic-layer-depositing Ga2O3 and ZnO with differentthickness, we can accurately control the oxygen vacancy concentration.When regulating ZnO to ∼31%, the RRAMs exhibit a forming-freeproperty as well as outstanding performance, including the ratio ofa high resistance state to the low resistance state of 1000, retentiontime of more than 1 × 104 s, and the endurance of100. By preparing RRAMs of different Zn concentration, we carriedout a comparative study and explored the physical origin for the forming-freeproperty as well as good performance. Finally, a unified model isproposed to account for the resistive switching and the current conductionmechanism, providing meaningful insights in the development of high-qualityand forming-free RRAMs for future memory and neuromorphic applications." @default.
- W3206705088 created "2021-10-25" @default.
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- W3206705088 date "2020-06-15" @default.
- W3206705088 modified "2023-09-27" @default.
- W3206705088 title "AtomicLayer Deposition of Ga2O3/ZnO Composite Filmsfor High-Performance Forming-Free ResistiveSwitching Memory" @default.
- W3206705088 doi "https://doi.org/10.1021/acsami.0c06476.s001" @default.
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