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• W3207031189 startingPage "130983" @default.
• W3207031189 abstract "ZnO films grown on Si(100) substrate through radio frequency (RF) sputtering are subjected to 100 keV Ni ion beam at different fluence (1×1016, 2.5×1016 and 5×1016 ions/cm2). High resolution X-ray diffraction revealed the increase in crystallite size and development of stress gradient in the ZnO thin films with the increasing Ni ion fluence. Ni implanted ZnO/Si(100) films exhibits room temperature ferromagnetism (RTFM) which is discussed via defect induced bound magnetic polaron model. Near-edge X-ray absorption fine-structure (NEXAFS) measurements at Ni L3,2-edge confirm the nature of implanted Ni ion inside the ZnO matrix. Further, NEXAFS at O K-edge revealed the onset of O(2p) with Ni(3d) orbital states, which is correlated with the observed RTFM." @default.
• W3207031189 created "2021-10-25" @default.
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• W3207031189 date "2022-01-01" @default.
• W3207031189 modified "2023-10-16" @default.
• W3207031189 title "Origin of magnetism in low energy Ni ion implanted ZnO thin films" @default.
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• W3207031189 doi "https://doi.org/10.1016/j.matlet.2021.130983" @default.
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