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• W3207078981 abstract "InSb has the smallest bandgap and highest electron mobility among III‐V semiconductors and is widely used for photodetectors and high‐frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single‐crystalline InSb microstructures on insulator‐covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high‐quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single‐crystalline InSb is illustrated and demonstrated here for the first time." @default.
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• W3207078981 date "2021-11-05" @default.
• W3207078981 modified "2023-10-17" @default.
• W3207078981 title "Fabrication of Single‐Crystalline InSb‐on‐Insulator by Rapid Melt Growth" @default.
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• W3207078981 doi "https://doi.org/10.1002/pssa.202100467" @default.
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