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- W3207730672 abstract "In this paper, DC and low-frequency noise characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with different gate-to-source lengths (L <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</inf> ) are presented. Due to the different (L <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</inf> ), the device with shortest shows highest transconductance (g <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</inf> ) and drain current. But the threshold voltages (V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</inf> ) are the same for all devices. In low-frequency noise measurement, not only flicker noise (1/f noise) exists also accompany by generation-recombination noise (G-R) noise). Noise power spectral densities (PSD) are similar in devices with different L <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</inf> , and 1/f noise shows carrier number fluctuation (CNF) is the dominant cause. In addition, this paper discussed the G-R noise and extracted the traps in GaN buffer layer with activation energy of $sim 0.35 text{eV}$." @default.
- W3207730672 created "2021-10-25" @default.
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- W3207730672 date "2021-08-25" @default.
- W3207730672 modified "2023-09-25" @default.
- W3207730672 title "DC Characteristics and Low-Frquency Noise of AlGaN/GaN HEMTs with Different Gate-to-Source Lengths" @default.
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- W3207730672 doi "https://doi.org/10.1109/rfit52905.2021.9565233" @default.
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