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- W3208247052 abstract "A model of charge carrier transport in heterojunction solar cells composed of a solar light‐absorbing semiconductor and a wide‐bandgap semiconducting metal oxide is proposed. It describes an electric field in the semiconductor originating from the difference in the electron work functions between the two contacting materials, an enhanced hole separation by this field, and subsequent trap‐assisted tunneling of holes through the semiconducting oxide. The model predicts a dramatic influence of the donor concentration in the semiconductor, trap parameters in the oxide, and ideality factor of the semiconductor/oxide heterojunction on the performance of the cell. The efficiency of the solar energy harvesting by MoO x /n‐Si solar cells is calculated to reach 23% of the donor concentration in Si of 10 18 cm −3 at a limited hole current density. It is predicted to be reduced to 16−18% when donor concentration is in the range of 10 15 −10 16 cm −3 . The numerical predictions agree well with experimental data, at least for donor concentrations in Si below 10 18 cm −3 , confirming suitability of the model for heterojunction solar cells composed of other semiconductors and semiconducting metal oxides." @default.
- W3208247052 created "2021-11-08" @default.
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- W3208247052 date "2021-11-14" @default.
- W3208247052 modified "2023-09-24" @default.
- W3208247052 title "An Enhanced Charge Carrier Separation in a Heterojunction Solar Cell with a Metal Oxide" @default.
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- W3208247052 doi "https://doi.org/10.1002/pssa.202100525" @default.
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