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- W3208273313 abstract "Hot-wire chemical vapour deposition is a versatile technique to deposit a-Si:H and nc-Si films at higher deposition rate (~5–10 A/s) as compared to Plasma enhanced chemical vapour deposition (1–2 A/s). We report the deposition of highly crystalline Si films at very high deposition rate (≥40 A/s) by adding methane to silane during thermal/catalytic decomposition. A series of films were deposited by varying the chamber pressure between 10 and 100 Pa at a substrate temperature of 300 °C and filament temperature 2000 °C. The hydrogen diluted silane (10% silane in hydrogen) and pure methane were used as precursors and gas flow rate ratio was kept constant at 10. Films prepared at lower pressure (≤20 Pa) were more crystalline and do not contain any trace of carbon atoms. Band-gap was found to increase from 1.24–1.63 eV when pressure was increased. It was observed that chamber pressure plays a key role in determining the crystallinity, disorder and composition of these films. Addition of methane to hydrogen diluted silane increased deposition rate and crystallinity of Si films at low pressure (≤20 Pa). Above 20 Pa pressure, carbon atoms signature was obtained. SiC films were obtained when pressure was>100 Pa." @default.
- W3208273313 created "2021-11-08" @default.
- W3208273313 creator A5068625183 @default.
- W3208273313 date "2019-01-01" @default.
- W3208273313 modified "2023-09-23" @default.
- W3208273313 title "Role of Chamber Pressure on Crystallinity and Composition of Silicon Films Using Silane and Methane As Precursors in Hot-Wire Chemical Vapour Deposition Technique" @default.
- W3208273313 hasPublicationYear "2019" @default.
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