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- W3208593721 abstract "This paper presents the DC design of a differential amplifier, an important building block on analog and mixed signal designs, utilizing the Verilog-A approach on Gate-All-Around Nanosheet (GAA-NSH) devices. The GAA-NSH is a device with two stacked silicon sheets in which the gate fully surrounds the channel, presenting the best electrostatic coupling possible for MOS technologies. The device has a 104nm effective width while having a physical width of only 15nm. The differential amplifier was designed with a V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DD</inf> of 2.1V and input common mode of 1.4V, while biased in different inversion regions with gm/I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</inf> values of 5 V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> , 8 V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> and 11 V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> . The gm/I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</inf> = 8V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> project was compared against a FinFET differential amplifier project, showing an improvement of gain and transconductance while occupying less physical area. Higher efficiency projects (gm/I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</inf> = 11 V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> ) present a higher gain while decreasing current consumption." @default.
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- W3208593721 date "2021-08-23" @default.
- W3208593721 modified "2023-10-02" @default.
- W3208593721 title "Design of a Gate-All-Around Stacked Nanosheet Differential Amplifier under Different Bias Conditions" @default.
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- W3208593721 doi "https://doi.org/10.1109/sbmicro50945.2021.9585744" @default.
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