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- W3208700424 abstract "To access semiconductor functionality, the metallic contact is a key issue. Silicon carbide (SiC) is unique because it inherently provides a monolithic metallic contact with unprecedented properties: epitaxial graphene that can be grown out of its (0001) facet. It is an atomically thin metal that is ultrarobust and nearly fully transparent. The contact is atomically flat, epitaxially defined, and can be tailored to be either ohmic or of Schottky type. This chapter first describes fabrication and processing as well as structural and electronic properties of epitaxial graphene contacts to SiC. Then, unique properties of this combined material system are presented that include a local definition of the charge carrier type in graphene and a concept that employs this for fully functional analog and digital electronics. Moreover, this monolithic material allows unprecedented insight into the speed limits of Schottky rectification. Finally, epitaxial graphene/SiC contacts open up opportunities in the realm of quantum technology. As transparent electrodes, they can be used for Stark tuning and spectral matching of luminescent point defects in SiC, a prerequisite for truly indistinguishable quantum systems." @default.
- W3208700424 created "2021-11-08" @default.
- W3208700424 creator A5031956896 @default.
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- W3208700424 date "2021-10-29" @default.
- W3208700424 modified "2023-10-16" @default.
- W3208700424 title "Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface" @default.
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- W3208700424 doi "https://doi.org/10.1002/9783527824724.ch10" @default.
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