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- W3208767026 abstract "Abstract Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 10 5 A cm −2 have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiency θ SH in TIs is quantified by both the SOT-induced shift of the magnetic switching field ( θ SH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) ( θ SH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption." @default.
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- W3208767026 date "2021-10-29" @default.
- W3208767026 modified "2023-10-18" @default.
- W3208767026 title "Magnetic memory driven by topological insulators" @default.
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- W3208767026 doi "https://doi.org/10.1038/s41467-021-26478-3" @default.
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