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- W3209099622 abstract "Eight-level/cell stable resistance switching (RS) was observed in an indium-gallium-zinc-oxide (IGZO)-resistive random (ReRAM) cell fabricated on ITO-coated glass substrate by providing nonuniform ozone (O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> ) anneal treatment to its sputtered IGZO films. From electrical measurements, it was observed that the time of O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> anneal significantly impacts the low field diffusion coefficient of O <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2−</sup> , which was reduced by more than 40 times when anneal time was increased from 10 to 30 min. Thus, by sequential stacking of nonuniform O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -annealed IGZO films, it was possible to create a diffusion-resistant medium to O <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2−</sup> which impacted the rate of current rise due to filamentary conduction. Furthermore, through experiments and numerical modeling, we determined vacancy distribution within the filament in a cell that received nonuniform anneal, which was later correlated with electrical conduction. The anneal scheme had been found feasible to realizing a greater number of non-identical stable resistance states up to a maximum eight-level/cell that were defined by a variable current compliance (CC)-based programming. Endurance and retention characteristics of the said resistance levels demonstrated adequate reproducibility and non-volatility." @default.
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- W3209099622 date "2021-12-01" @default.
- W3209099622 modified "2023-09-25" @default.
- W3209099622 title "Impact of Nonuniform Ozone Anneal Treatment on the Resistance Levels in an IGZO-ReRAM Fabricated on ITO-Coated Glass Substrate" @default.
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- W3209099622 doi "https://doi.org/10.1109/ted.2021.3121231" @default.
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