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• W3209557584 abstract "This chapter is about SiC reliability topics. In comparison to the well-understood silicon power devices like insulated gate bipolar transistors (IGBTs), devices made of silicon carbide may behave completely different under special overload events. Due to the nature of silicon carbide as base material, with properties such as higher mechanical stiffness and thermal conductivity as well as low intrinsic-carrier density, devices like metal–oxide–semiconductor field-effect transistors (MOSFETs) or Schottky diodes demonstrate a significantly changed behavior under short-circuit or surge-current stress and end up in different reliability results and measures to improve the lifetime." @default.
• W3209557584 created "2021-11-08" @default.
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• W3209557584 date "2021-10-29" @default.
• W3209557584 modified "2023-10-11" @default.
• W3209557584 title "<scp>SiC</scp> Reliability Aspects" @default.
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• W3209557584 doi "https://doi.org/10.1002/9783527824724.ch14" @default.
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