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• W3210152470 abstract "In this work, the influence of TiAl gate electrode fabricated by atomic layer deposition (ALD) and physical vapor deposition (PVD) on threshold voltage (<inline-formula> <tex-math notation=LaTeX>$text{V}_{text {t}}$ </tex-math></inline-formula>) for metal-gated NMOSFETs is respectively investigated. Compared to ALD TiAl, the 200 mV lower <inline-formula> <tex-math notation=LaTeX>$text{V}_{text {t}}$ </tex-math></inline-formula> for PVD TiAl is demonstrated and attributed to the oxidation of TiAl with a strong segregation of Ti near TiAl/TaN interface. It is further revealed that by changing the thickness of the first layer ALD TiAl film, the multi-<inline-formula> <tex-math notation=LaTeX>$text{V}_{text {t}}$ </tex-math></inline-formula> can be easily obtained within a range of 200 mV using an ALD TiAl /PVD TiAl double layer gate electrode." @default.
• W3210152470 created "2021-11-08" @default.
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• W3210152470 date "2021-12-01" @default.
• W3210152470 modified "2023-10-12" @default.
• W3210152470 title "Difference Between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs" @default.
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• W3210152470 doi "https://doi.org/10.1109/led.2021.3124801" @default.
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