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- W3210367636 abstract "SiC devices have become most popular semiconductors due to the promising performances under high temperature, high voltage and high frequency. In the future, SiC will bring considerable achievements to increase power density of converter systems. In this paper, 900 V~1200 V SiC modules were designed and developed for EV application." @default.
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- W3210367636 date "2020-07-07" @default.
- W3210367636 modified "2023-09-24" @default.
- W3210367636 title "Design and Development of High Voltage and High Current SiC MOSFET Modules" @default.
- W3210367636 hasPublicationYear "2020" @default.
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